1. Indlela yokumela imigangatho yentsimbi yaseTshayina yesilicon:
(1) Umcu wentsimbi we-silicon opholileyo oqengqelekayo
Indlela yokumela: Amaxesha angama-100 e-DW + ilahleko yexabiso lentsimbi (ixabiso lelahleko yentsimbi kwiyunithi yobunzima beyunithi kwi-frequency ye-50HZ kunye ne-sinusoidal magnetic induction peak value ye-1.5T.) + Amaxesha angama-100 exabiso lobunzima.
Ngokomzekelo, i-DW470-50 imele insimbi ye-silicon epholileyo epholileyo enexabiso lokulahlekelwa kwentsimbi ye-4.7w / kg kunye nobukhulu be-0.5mm.Imodeli entsha ngoku imelwe njenge-50W470.
(2) Umcu wentsimbi we-silicon owenziwe ngokubanda (iphepha)
Indlela yokumela: Amaxesha angama-100 e-DQ + ilahleko yexabiso lentsimbi (ixabiso lelahleko yentsimbi kwiyunithi nganye yeyunithi kwi-frequency ye-50HZ kunye nexabiso le-sinusoidal magnetic induction peak ye-1.7T.) + Amaxesha angama-100 obunzima bobunzima.Ngamanye amaxesha i-G yongezwa emva kwexabiso lelahleko yentsimbi ukubonisa ukunyuswa kwamagnetic.
Ngokomzekelo, i-DQ133-30 imele i-cold-rolled oriented oriented silicon strip (iphepha) kunye nexabiso lokulahlekelwa kwentsimbi ye-1.33 kunye nobukhulu be-0.3mm.Imodeli entsha ngoku imelwe njenge-30Q133.
(3) Ipleyiti yentsimbi yesilicon eshushu eqengqelekisiweyo
Amacwecwe ensimbi ye-silicon ashushu amelwe yi-DR kwaye ahlulwe abe yintsimbi ephantsi ye-silicon (umxholo we-silicon ≤ 2.8%) kunye ne-silicon ephezulu yensimbi (umxholo we-silicon> 2.8%) ngokwemixholo ye-silicon.
Indlela yokumela: I-DR + amaxesha angama-100 exabiso lelahleko yentsimbi (ixabiso lelahleko yentsimbi ngeyunithi yobunzima xa ixabiso eliphezulu le-induction induction intensity kunye ne-50HZ ngokuphindaphindiweyo i-magnetization kunye nokuguqulwa kwe-sinusoidal yi-1.5T) + amaxesha angama-100 wexabiso lobunzima.Ngokomzekelo, i-DR510-50 imele i-silicone yentsimbi eshushu-eshushu kunye nexabiso lelahleko lentsimbi ye-5.1 kunye nobukhulu be-0.5mm.
Ibakala le-silicone yentsimbi eshushu-eshushu kwizixhobo zendlu imelwe yi-JDR + ixabiso lelahleko yentsimbi + ixabiso lexabiso, njenge-JDR540-50.
2. Indlela yokumela imigangatho yentsimbi yaseJapan yesilicon:
(1) Umcu wentsimbi we-silicon oqengqelekayo oqengqelekayo
Iqulunqwe ubukhulu begama (ixabiso elandiswa ngamaxesha angama-100) + inombolo yekhowudi A + ixabiso lelahleko yentsimbi eqinisekisiweyo (ixabiso elifunyenwe ngokwandisa ixabiso lelahleko yentsimbi ngamaxesha angama-100 xa i-frequency yi-50HZ kunye nobuninzi be-magnetic flux density yi-1.5 T).
Ngokomzekelo, i-50A470 imele i-cold-rolled non-oriented silicon steel strip kunye nobukhulu be-0.5mm kunye nexabiso lelahleko eliqinisekisiweyo le-≤4.7.
(2) Umcu wentsimbi we-silicon owenziwe ngokubanda
Ukususela kubukhulu obuqhelekileyo (ixabiso elandiswe ngamaxesha angama-100) + ikhowudi G: ebonisa izinto eziqhelekileyo, P: ebonisa izinto zokuqhelanisa eziphezulu + ilahleko yentsimbi eqinisekisiweyo yexabiso (ukwandisa ixabiso lelahleko yentsimbi ngamaxesha angama-100 xa i-frequency yi-50HZ kunye nobukhulu be-magnetic flux Ubuninzi bexabiso le-1.7T emva).
Ngokomzekelo, i-30G130 imele i-cold-rolled oriented oriented silicon strip kunye nobukhulu be-0.3mm kunye nexabiso lelahleko eliqinisekisiweyo le-≤1.3.
Ixesha lokuposa: Apr-09-2024